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Proceedings Paper

New method of 2-dimensional metrology using mask contouring
Author(s): Ryoichi Matsuoka; Yoshikazu Yamagata; Akiyuki Sugiyama; Yasutaka Toyoda
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Paper Abstract

We have developed a new method of accurately profiling and measuring of a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, this edge detection method is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. This method realizes two-dimensional metrology for refined pattern that had been difficult to measure conventionally by utilizing high precision contour profile. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. This is to say, demands for quality is becoming strenuous because of enormous quantity of data growth with increasing of refined pattern on photo mask manufacture. In the result, massive amount of simulated error occurs on mask inspection that causes lengthening of mask production and inspection period, cost increasing, and long delivery time. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method of a DFM solution using two-dimensional metrology for refined pattern.

Paper Details

Date Published: 17 October 2008
PDF: 13 pages
Proc. SPIE 7122, Photomask Technology 2008, 71222T (17 October 2008); doi: 10.1117/12.802137
Show Author Affiliations
Ryoichi Matsuoka, Hitachi High-Technologies Corp. (Japan)
Yoshikazu Yamagata, Hitachi High-Technologies Corp. (Japan)
Akiyuki Sugiyama, Hitachi High-Technologies Corp. (Japan)
Yasutaka Toyoda, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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