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Proceedings Paper

Progress in developing nanophotonic integrated circuits
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Paper Abstract

We review recent progress in the development of nanophotonic devices using the optical near-field interaction. ZnO nanocrystallites are potentially ideal components for realizing room-temperature operation of such devices due to their high exciton-binding energy and great oscillator strength. To confirm this promising optical property of ZnO, we examined the near-field time-resolved spectroscopy of ZnO nanorod double-quantum-well structures (DQWs). First, we observed the nutation of the population between the resonantly coupled exciton states of DQWs, in which the coupling strength of the near-field interaction was found to decrease exponentially as the separation increased. Furthermore, we successfully demonstrated the AND-gate operation by controlling a dipole-forbidden optical energy transfer among resonant exciton states. Our results provide criteria for designing nanophotonic devices. The success of time-resolved near-field spectroscopy of isolated DQWs described here is a promising step toward realizing a practical nanometerscale photonic switch and related devices.

Paper Details

Date Published: 29 April 2008
PDF: 8 pages
Proc. SPIE 7007, INDLAS 2007: Industrial Laser Applications, 700703 (29 April 2008); doi: 10.1117/12.801925
Show Author Affiliations
Takashi Yatsui, Japan Science and Technology Agency (Japan)
Gyu-Chul Yi, Pohang Univ. of Science and Technology (South Korea)
Motoichi Ohtsu, Japan Science and Technology Agency (Japan)
Univ. of Tokyo (Japan)

Published in SPIE Proceedings Vol. 7007:
INDLAS 2007: Industrial Laser Applications
Mircea Udrea, Editor(s)

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