Share Email Print
cover

Proceedings Paper

Progress in developing nanophotonic integrated circuits
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We review recent progress in the development of nanophotonic devices using the optical near-field interaction. ZnO nanocrystallites are potentially ideal components for realizing room-temperature operation of such devices due to their high exciton-binding energy and great oscillator strength. To confirm this promising optical property of ZnO, we examined the near-field time-resolved spectroscopy of ZnO nanorod double-quantum-well structures (DQWs). First, we observed the nutation of the population between the resonantly coupled exciton states of DQWs, in which the coupling strength of the near-field interaction was found to decrease exponentially as the separation increased. Furthermore, we successfully demonstrated the AND-gate operation by controlling a dipole-forbidden optical energy transfer among resonant exciton states. Our results provide criteria for designing nanophotonic devices. The success of time-resolved near-field spectroscopy of isolated DQWs described here is a promising step toward realizing a practical nanometerscale photonic switch and related devices.

Paper Details

Date Published: 29 April 2008
PDF: 8 pages
Proc. SPIE 7007, INDLAS 2007: Industrial Laser Applications, 700703 (29 April 2008); doi: 10.1117/12.801925
Show Author Affiliations
Takashi Yatsui, Japan Science and Technology Agency (Japan)
Gyu-Chul Yi, Pohang Univ. of Science and Technology (South Korea)
Motoichi Ohtsu, Japan Science and Technology Agency (Japan)
Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 7007:
INDLAS 2007: Industrial Laser Applications

© SPIE. Terms of Use
Back to Top