Share Email Print

Proceedings Paper

Crystal growth printability in an advanced foundry FAB: a correlation study between STARlight and ultra broadband BrightField inspection technologies
Author(s): Teng Hwee Ng; Mohammed Fahmy bin Rahmat; Barry Saville; Patrick Pak; WeeTeck Chia; Aaron Chin; Mike VanRiet; Russell Dover; Raj Badoni
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In advanced IC manufacturing reticle contamination through crystal growth causing printed defects¹ is a major source of yield loss. This crystal growth requires frequent inspection to ensure reticles are free from such contamination (reticle requalification). STARlight is the industry accepted method for mask inspection in wafer fabs for reticle re-qualification (requal) ². The principal focus of this paper is a study correlating the detection of contamination (crystal growth) on logic product masks found with STARlight to defects that can be found on a print-check wafer (a photo-resist test wafer). A critical component in this study was the translation of reticle coordinates to wafer coordinates and integrating the results between high-resolution broadband DUV BrightField inspection (BF) and scanning electron microscope (SEM) review. All of the STARlight defect locations were reviewed using the SEM regardless if the defect was found on opaque or on clear surfaces of the mask. As such defects being SEM reviewed were classified as either 'printing', 'early-warning' or 'non-printing'. BF defect inspection results after repeater analysis were compared with STARlight results to determine the correlations. SEM Defect Review was performed on STARlight inspection results and the resulting classified data was correlated to the BF defect inspection results.

Paper Details

Date Published: 17 October 2008
PDF: 5 pages
Proc. SPIE 7122, Photomask Technology 2008, 712213 (17 October 2008); doi: 10.1117/12.801868
Show Author Affiliations
Teng Hwee Ng, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Mohammed Fahmy bin Rahmat, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Barry Saville, KLA-Tencor Corp. (United States)
Patrick Pak, KLA-Tencor Corp. (United States)
WeeTeck Chia, KLA-Tencor Corp. (United States)
Aaron Chin, KLA-Tencor Corp. (United States)
Mike VanRiet, KLA-Tencor Corp. (United States)
Russell Dover, KLA-Tencor Corp. (United States)
Raj Badoni, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

© SPIE. Terms of Use
Back to Top