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Proceedings Paper

Reflectivity kinetics in the vicinity of exciton transitions in semiconductor nanostructures
Author(s): N. N. Rubtsova; O. V. Buganov; A. A. Kovalyov; M. A. Putyato; V. V. Preobrazhenski; O. P. Pchelyakov; S. A. Tikhomirov; T. S. Shamirzaev
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Paper Abstract

Reflectivity kinetics of semiconductor samples with GaAs/AlGaAs multiple quantum wells is investigated by the pump-probe technique with temporal resolution of about 150 fs. Excitons of type E1HH1 and E1LH1 appear in the kinetics of non-stationary spectra of reflectivity in spite of high density of photo-generated two-dimensional electron gas. The difference in the shape and kinetics of nonstationary reflectivity spectra is found for the samples with different detuning of exciton transition relative the pump radiation frequency.

Paper Details

Date Published: 23 April 2008
PDF: 7 pages
Proc. SPIE 7024, International Workshop on Quantum Optics 2007, 70240O (23 April 2008); doi: 10.1117/12.801692
Show Author Affiliations
N. N. Rubtsova, Institute of Semiconductor Physics (Russia)
O. V. Buganov, Stepanov Institute of Physics (Belarus)
A. A. Kovalyov, Institute of Semiconductor Physics (Russia)
M. A. Putyato, Institute of Semiconductor Physics (Russia)
V. V. Preobrazhenski, Institute of Semiconductor Physics (Russia)
O. P. Pchelyakov, Institute of Semiconductor Physics (Russia)
S. A. Tikhomirov, Stepanov Institute of Physics (Belarus)
T. S. Shamirzaev, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 7024:
International Workshop on Quantum Optics 2007

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