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Proceedings Paper

EUVL practical mask structure with light shield area for 32nm half pitch and beyond
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Paper Abstract

The effect of mask structure with light shield area on the printability in EUV lithography was studied. When very thin absorber on EUVL mask is used for ULSI application, it then becomes necessary to create EUV light shield area on the mask in order to suppress possible leakage of EUV light from neighboring exposure shots. We proposed and fabricated two types of masks with very thin absorber and light shield area structure. For both types of masks we demonstrated high shield performances at light shield areas by employing a Small Field Exposure Tool (SFET).

Paper Details

Date Published: 17 October 2008
PDF: 11 pages
Proc. SPIE 7122, Photomask Technology 2008, 712227 (17 October 2008); doi: 10.1117/12.801576
Show Author Affiliations
Takashi Kamo, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Hajime Aoyama, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Tadahiko Takikawa, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Tsutomu Shoki, HOYA Corp. (Japan)
Youichi Usui, HOYA Corp. (Japan)
Morio Hosoya, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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