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Proceedings Paper

The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond
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Paper Abstract

In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain) method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp- 325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of performance of EUV lithographic systems.

Paper Details

Date Published: 17 October 2008
PDF: 10 pages
Proc. SPIE 7122, Photomask Technology 2008, 71222F (17 October 2008); doi: 10.1117/12.801550
Show Author Affiliations
Hiroyuki Shigemura, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuyoshi Amano, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Yasushi Nishiyama, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Yukiyasu Arisawa, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Hideaki Hashimoto, NuFlare Technology, Inc. (Japan)
Norio Kameya, NuFlare Technology, Inc. (Japan)
Masaya Takeda, NuFlare Technology, Inc. (Japan)
Nobutaka Kikuiri, Advanced Mask Inspection Technology, Inc. (Japan)
Ryoichi Hirano, Advanced Mask Inspection Technology, Inc. (Japan)
Masatoshi Hirono, Advanced Mask Inspection Technology, Inc. (Japan)


Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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