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Proceedings Paper

Study of influence to transistor properties on the change of OPC pattern
Author(s): Kazuya Sugawa; Norimasa Nagase; Takahisa Itoh; Mitsuo Sakurai; Tomoyuki Okada
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Paper Abstract

Slight change of OPC pattern shape may influence transistor characteristics. So inputting the result of Litho- Simulation, Contour, to SPICE-simulator, we investigated the change of the transistor characteristic. First of all, we investigated the sensitivity of the transistor characteristics to OPC pattern change. We found that the difference of shape with Isolated, Dense pattern, and a different OPC tool caused difference after SPICE-simulation. In this investigation, we report focusing on the transient and DC analysis of transistor characteristics. Contour data was measured and averaged before input to SPICE and a change of transistor characteristic was able to be detected. We came to the conclusion that this investigation method is effective to check the influence of the transistor characteristics due to OPC pattern change. And we can adopt this method as one technique for deciding the applicability of the OPC tool and its upgrade, which were issues for MASK data processing.

Paper Details

Date Published: 17 October 2008
PDF: 8 pages
Proc. SPIE 7122, Photomask Technology 2008, 71223T (17 October 2008); doi: 10.1117/12.801547
Show Author Affiliations
Kazuya Sugawa, Fujitsu Microelectronics, Ltd. (Japan)
Norimasa Nagase, Fujitsu Microelectronics, Ltd. (Japan)
Takahisa Itoh, Fujitsu Microelectronics, Ltd. (Japan)
Mitsuo Sakurai, Fujitsu Microelectronics, Ltd. (Japan)
Tomoyuki Okada, Fujitsu Microelectronics, Ltd. (Japan)


Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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