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Proceedings Paper

Simulation analysis of backside defects printability in 193nm photolithography
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Paper Abstract

Backside defects a few micrometers in size are serious concern in lithography because they can degrade the image quality on a wafer. It was known that defects attached on the backside affected the printing images on a wafer by locally altering the partial coherence (σ) and the transmitted intensity of the illumination. The ability to detect and to simulate their impact of defects on the backside is one of the key components in ensuring quality of photomask. The purpose of this study is to determine the minimum size of defects on the backside which would be affected printability in 193nm photolithography. It was investigated to the influence of wafer critical dimension (CD) variation according to illumination and NA, that of refraction according to defect size. For this study, a reticle was designed to include line and space patterns, contact patterns and isolated patterns on the front side. And the type of defects attached on the backside was made of chrome to investigate the relation between transmittance of backside defects and its printability. The correlation of measurements made with UV and DUV-based inspection system; simulation performed with a 193nm aerial image measurement system. Besides the allowable size of backside defects was determined using the criterion of a maximum intensity variation of 10%.

Paper Details

Date Published: 17 October 2008
PDF: 8 pages
Proc. SPIE 7122, Photomask Technology 2008, 712218 (17 October 2008); doi: 10.1117/12.801437
Show Author Affiliations
Jisun Ryu, Hynix Semiconductor, Inc. (Korea, Republic of)
Dongwook Lee, Hynix Semiconductor, Inc. (Korea, Republic of)
Jinho Ryu, Hynix Semiconductor, Inc. (Korea, Republic of)
Sookyeong Jeong, Hynix Semiconductor, Inc. (Korea, Republic of)
SangPyo Kim, Hynix Semiconductor, Inc. (Korea, Republic of)
Changyeol Kim, Hynix Semiconductor, Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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