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Proceedings Paper

Simulation-based EUV source and mask optimization
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Paper Abstract

Source and mask optimization has become a promising technique to push the limits of 193 nm immersion lithography. As the introduction of EUV lithography is at least delayed to the 22 nm technology node, sophisticated resolution enhancement techniques will already be required at a very early stage. Thus, pinpointing ideal mask layouts, mask materials, and illumination settings are as important aspects for EUV as for optical lithography. In this paper, we propose the application of global optimization techniques to identify appropriate process conditions for EUV lithography, using rigorous mask and imaging simulations.

Paper Details

Date Published: 17 October 2008
PDF: 14 pages
Proc. SPIE 7122, Photomask Technology 2008, 71221Y (17 October 2008); doi: 10.1117/12.801436
Show Author Affiliations
Tim Fühner, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Andreas Erdmann, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Peter Evanschitzky, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)


Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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