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Proceedings Paper

Signal analysis for the actinic full-field EUVL mask blank inspection system
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Paper Abstract

We have developed an actinic full-field inspection system to detect multilayer phase defect with dark field imaging. With this system, programmed phase defects on a mask blank were observed. The system can detect phase defects caused by a 1.5 nm high and 60 nm wide protrusion on a multilayer surface. Background intensity and signal to background ratio (SBR) of the observed defect images are analyzed with simulation. The background intensities were calculated with the model that it is generated by light scattered from mask surface roughness. The result indicates that the larger outer NA (numerical aperture) leads to an increase in the background intensity. In this correlation of NA with the background intensity, the calculation and experimental results correspond well. The defect images were simulated using the point spread function (PSF) of flare generated by mirror surface roughness employing Fourier technique. The SBRs of simulated defect images corresponded well with the SBRs of the observed images. These results support the calculation and simulation models are proper.

Paper Details

Date Published: 17 October 2008
PDF: 8 pages
Proc. SPIE 7122, Photomask Technology 2008, 71222D (17 October 2008); doi: 10.1117/12.801420
Show Author Affiliations
Takeshi Yamane, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Teruo Iwasaki, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihisa Tomie, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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