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Proceedings Paper

70nm DRAM intra-field CDU improvement by dose modulation on mask transmittance
Author(s): Tomas Chin; Wen Bin Wu; Chiang Lin Shih; Pei Cheng Fan; Guy Ben Zvi
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Paper Abstract

DRAM intra-field CD uniformity (CDU) demand becomes more crucial with pattern size shrink and wafer die or memory size expanding. Intra-field CDU error mainly comes from mask CD error, scanner exposure and wafer process. This study makes use of a method to extract systematic CDU error from multi-field CDU results. Based on the information of the systematic CDU error, localized mask transmittance modulation is implemented to compensate the intra-field systematic CDU error on wafer. A focused ultrafast laser beam forms shading elements in mask quartz substrate. Mask transmittance modulation is controlled by the shading element density variation. This study will demonstrate the intra-field CDU improvement result, CD modulation calibration validity, CD proximity variation result and mask inspection result etc.

Paper Details

Date Published: 17 October 2008
PDF: 8 pages
Proc. SPIE 7122, Photomask Technology 2008, 712238 (17 October 2008); doi: 10.1117/12.801417
Show Author Affiliations
Tomas Chin, Nanya Technology Corp. (Taiwan)
Wen Bin Wu, Nanya Technology Corp. (Taiwan)
Chiang Lin Shih, Nanya Technology Corp. (Taiwan)
Pei Cheng Fan, Nanya Technology Corp. (Taiwan)
Guy Ben Zvi, Pixer Technology, Ltd. (Israel)

Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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