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Proceedings Paper

A study of adsorption effect of absorbent applied in RSP150 SMIF-POD for 193nm ArF reticle haze prevention and control
Author(s): Fu-Sheng Chu; Shean-Hwan Chiou
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Paper Abstract

Reticle making, pellicle remount fee and cycle time increase as the IC manufacturer moves to high-end technology nodes at smaller Critical Dimension (CD) of hyper-fine patterning layout. Reticle Haze issue has became a critical matter in photolithography process, ArF reticle especially. The requirement of manufacture, the impact of wafer yield suffered and the resultant high mask-related cost have created significant fabrication mask operation interest and expend great effort to extend ArF mask utilization life time. There are currently three phase of crucial countermeasures on the prevention and control of reticle Haze when mask usage from trial migrate to mass production stage. For reticle Haze prevention, chemical contaminant dissipation operation mechanism must to be started in phase one first. After Haze related reactants were removed, RSP150 SMIF-POD continuous purge with superior purification CDA ("CDA" is abbreviated from Clean Dry Air) or inert gas AN2 (A class Nitrogen) was conducted to keep SMIF-POD inside mini-environment chemical free in the second phase. The third phase, builds management of regular mask purge operation, keep mask exposure under Haze generation threshold and collocate with mask pattern defect re-qualification mechanism. In this study, absorbent was applied and installed in RSP150 SMIF-POD inside through adapter design. Absorbent was proven that it is effective in keeping SMIF-POD inside mini-environment low inorganic and organic compounds existence through a series certification of experiments and has outstanding performance on 193 nm ArF reticle preservation operation. With respect to ArF mask operation in IC fabrication, four critical aspects would be discussed in follow-up work, respectively. (1). Research of inorganic Haze baseline in Fab. environment (key reactant species of Haze generation in Fab.), (2). Performance certification of adsorption capability of absorbent, (3). Optimum approach of collocation of absorbent adsorption and purge operation for Haze prevention and control, (4). Analysis of Haze generation threshold on reticle pattern side (reticle exposure Q-time).

Paper Details

Date Published:
PDF: 9 pages
Proc. SPIE 7122, Photomask Technology 2008, 71223K; doi: 10.1117/12.801404
Show Author Affiliations
Fu-Sheng Chu, Rexchip Electronics Corp. (Taiwan)
Shean-Hwan Chiou, Rexchip Electronics Corp. (Taiwan)

Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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