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Proceedings Paper

Process control of chrome dry etching by complete characterization of the RF power delivery
Author(s): Björn Sass; Ralf Schubert; Thomas Jakubski; Sebastian Mauermann; Pavel Nesladek; Andreas Wiswesser; Karl-Heinz Gindra; Ray Malone
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Paper Abstract

In order to fulfil the upcoming requirements for photomasks there is a need for improving the process stability (reproducibility) of the unit processes in photomask fabrication. In order to understand and minimize the etch contribution to the CD stability impedance sensors integrated into the capacitively coupled radio frequency (RF) circuit (bias circuit) have shown a big potential. The last step towards a full characterization of the RF properties is the integration of impedance sensors in the inductively coupled RF circuit (source). This kind of sensor measures voltage, current and phase angle for the fundamental (13.56 MHz) and higher harmonics (up to the 5th harmonic). In this paper we are describing the integration of the Z-Scan sensors into the source RF matchbox and its impact on the RF and CD characteristics of the mask etcher. The central point is the correlation of impedance data to CD data. We will also compare the responses for bias and source impedance measurements.

Paper Details

Date Published: 17 October 2008
PDF: 8 pages
Proc. SPIE 7122, Photomask Technology 2008, 71220E (17 October 2008); doi: 10.1117/12.801080
Show Author Affiliations
Björn Sass, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Ralf Schubert, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Thomas Jakubski, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Sebastian Mauermann, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Pavel Nesladek, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Andreas Wiswesser, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Karl-Heinz Gindra, SEMEQ Technologies GmbH (Germany)
Ray Malone, Pivotal Systems (United States)

Published in SPIE Proceedings Vol. 7122:
Photomask Technology 2008
Hiroichi Kawahira; Larry S. Zurbrick, Editor(s)

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