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Proceedings Paper

Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar
Author(s): Yuh-Renn Wu; Peichen Yu; C. H. Chiu; Cheng-Yu Chang; H. C. Kuo
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Paper Abstract

We have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB) technique. The micro-photoluminescence (μ-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of μ-PL.

Paper Details

Date Published: 2 September 2008
PDF: 10 pages
Proc. SPIE 7058, Eighth International Conference on Solid State Lighting, 70580G (2 September 2008); doi: 10.1117/12.800658
Show Author Affiliations
Yuh-Renn Wu, National Taiwan Univ. (Taiwan)
Peichen Yu, National Chiao-Tung Univ. (Taiwan)
C. H. Chiu, National Chiao-Tung Univ. (Taiwan)
Cheng-Yu Chang, National Taiwan Univ. (Taiwan)
H. C. Kuo, National Chiao-Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7058:
Eighth International Conference on Solid State Lighting
Ian T. Ferguson; Tsunemasa Taguchi; Ian E. Ashdown; Seong-Ju Park, Editor(s)

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