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Proceedings Paper

The source of carbon contamination for EUV mask production
Author(s): Yongdae Kim; Junsik Lee; Yongkyoo Choi; Changreol Kim
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Paper Abstract

As the semiconductor industry requires lithography suitable for 32-nm node, extreme ultraviolet lithography (EUVL) has the potential to provide this capability for the mass fabrication of semiconductor devices. But because an extreme ultraviolet (EUV) lithography exposure system is operated in vacuum, during irradiation by EUV light, hydrocarbons are decomposed in vacuum1-3, for example, by the out-gassing from EUV mask, and contaminate the surface of imaging optics which is coated with Mo/Si multi-layers with carbon. Thus, this contamination not only reduces the reflectivity of the Mo/Si multi-layers of imaging optics and degrades the exposure uniformity, but also degrades the resolution of the imaging optics. In this study, as we examined the volume of the out-gassing and the species from EUV mask after every process for EUV mask production, we will control the carbon contamination of EUV mask. Keywords: EUV, carbon contamination, reflectance, out-gassing

Paper Details

Date Published: 19 May 2008
PDF: 7 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70281U (19 May 2008); doi: 10.1117/12.799668
Show Author Affiliations
Yongdae Kim, Hynix Semiconductor Inc. (South Korea)
Junsik Lee, Hynix Semiconductor Inc. (South Korea)
Yongkyoo Choi, Hynix Semiconductor Inc. (South Korea)
Changreol Kim, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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