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Proceedings Paper

Shooting method calculation of temperature dependence of transition energy for quantum well structure
Author(s): Bunjong Jukgoljun; Wisanu Pecharapa; Wicharn Techitdheera
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Paper Abstract

The ground state transition energy as various temperatures of a single quantum well structure has been calculated. The numerical technique called shooting method was developed to get eigen values and eigen functions. Passler's model and Aspnes's equation are adopted to calculate the energy gap (Eg) of Al0.3Ga0.7As and GaAs respectively. Our calculation has been tested by comparing the results to PL experimental data of Al0.3Ga0.7As / GaAs single quantum well. Good agreement has been found in the low temperature range (less than 40 K) and fair result has been obtained in the range of temperature higher than 40 K.

Paper Details

Date Published: 3 April 2008
PDF: 5 pages
Proc. SPIE 6793, International Workshop and Conference on Photonics and Nanotechnology 2007, 67930L (3 April 2008); doi: 10.1117/12.799424
Show Author Affiliations
Bunjong Jukgoljun, King Mongkut's Institute of Technology Ladkrabang (Thailand)
Wisanu Pecharapa, King Mongkut's Institute of Technology Ladkrabang (Thailand)
Wicharn Techitdheera, King Mongkut's Institute of Technology Ladkrabang (Thailand)


Published in SPIE Proceedings Vol. 6793:
International Workshop and Conference on Photonics and Nanotechnology 2007

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