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Proceedings Paper

Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide
Author(s): Asawin Sinsarp; Takashi Manago; Fumiyoshi Takano; Hiro Akinaga
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Paper Abstract

We fabricated an FePt/MgO tunneling junction (Fe55Pt45) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.

Paper Details

Date Published: 3 April 2008
PDF: 5 pages
Proc. SPIE 6793, International Workshop and Conference on Photonics and Nanotechnology 2007, 67930K (3 April 2008); doi: 10.1117/12.799422
Show Author Affiliations
Asawin Sinsarp, Mahidol Univ. (Thailand)
National Institute of Advanced Industrial Science and Technology (Japan)
Takashi Manago, Tokyo Univ. of Science (Japan)
Fumiyoshi Takano, National Institute of Advanced Industrial Science and Technology (Japan)
Hiro Akinaga, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 6793:
International Workshop and Conference on Photonics and Nanotechnology 2007

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