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Proceedings Paper

PROVE: a photomask registration and overlay metrology system for the 45 nm node and beyond
Author(s): G. Klose; D. Beyer; M. Arnz; N. Kerwien; N. Rosenkranz
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Paper Abstract

The continuous progress in semiconductor technology has caused mask feature sizes shrinking to 120 nm for the 45nm node and down to 85 nm for the 32nm node. Along with the smaller features, mask image placement accuracy has to improve to 3.4 nm by 2013. Applying double patterning in particular requires rigorous manufacturing control over level to level registration in order to achieve the specified yield and device speed. There is currently no registration tool that ensures image placement performance at the minimum feature size of current and future technology nodes. This work describes fundamental concepts and working principals of a new metrology tool currently under development at Carl Zeiss for measuring image placement and critical dimension in photomask manufacturing. The design of the instrument will be discussed with special emphasis on its optical components. Benefits and advantages using 193nm illumination as well as contrast simulations on different types of masks are presented.

Paper Details

Date Published: 19 May 2008
PDF: 6 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702832 (19 May 2008); doi: 10.1117/12.799407
Show Author Affiliations
G. Klose, Carl Zeiss SMT AG (Germany)
D. Beyer, Carl Zeiss SMS GmbH (Germany)
M. Arnz, Carl Zeiss SMT AG (Germany)
N. Kerwien, Carl Zeiss SMT AG (Germany)
N. Rosenkranz, Carl Zeiss SMS GmbH (Germany)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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