Share Email Print
cover

Proceedings Paper

Temperature-dependent photoluminescence investigation of narrow well-width InGaAs/InP single quantum well
Author(s): W. Pecharapa; W. Techitheera; P. Thanomgam; J. Nukeaw
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The formation of In0.53Ga0.47As/InP single quantum well with narrow well width grown by Organometallic Vapor Phase Epitaxy is verified by photoluminescence spectroscopy. PL spectra exhibit the e(1)-hh(1) transition in the well. PL measurement was conducted at various temperatures from 15K to 200K in order to investigate the important temperature-dependent parameters of this structure. Important parameters such as activation energies responsible for the photoluminescence quenching and broadening mechanisms are achieved. Because of small thermal activation energy of 15.1 meV in the narrow well, carriers can escape from the well to the barrier states. The dependence of PL width on temperature revealed that Inhomogeneous mechanism is the dominant mechanism for the broadening of PL peak and homogeneous mechanism is responsible at high temperature due to electron-phonon interaction.

Paper Details

Date Published: 3 April 2008
PDF: 7 pages
Proc. SPIE 6793, International Workshop and Conference on Photonics and Nanotechnology 2007, 67930C (3 April 2008); doi: 10.1117/12.799254
Show Author Affiliations
W. Pecharapa, King Mongkut's Institute of Technology Ladkrabang (Thailand)
W. Techitheera, King Mongkut's Institute of Technology Ladkrabang (Thailand)
P. Thanomgam, King Mongkut's Institute of Technology Ladkrabang (Thailand)
J. Nukeaw, King Mongkut's Institute of Technology Ladkrabang (Thailand)


Published in SPIE Proceedings Vol. 6793:
International Workshop and Conference on Photonics and Nanotechnology 2007

© SPIE. Terms of Use
Back to Top