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Proceedings Paper

An application of carbon nanotubes for integrated circuit interconnects
Author(s): J. C. Coiffic; L. E. Foa Torres; H. Le Poche; M. Fayolle; S. Roche; S. Maitrejean; S. Roualdes; A. Ayral
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Paper Abstract

Integrated circuits fabrication is soon reaching strong limitations. Help could come from using carbon nanotubes as conducting wires for interconnects. Although this solution was proposed six years ago, researchers still come up with many obstacles such as localization, low temperature growth on copper, contacting and reproducibility. The integration processes exposed here intend to meet the industrial requirements. Two approaches are then possibly followed. Either using densely packed single wall (SWCNT) (or very tiny multiwall) nanotubes, or filling up the whole interconnect diameter with a single large multiwall (MWCNT) nanotube. In this work, we focus on the integration of multiwall vertical interconnects. Densely packed MWCNTs are grown in via holes by CVD. Alternatively, we have developed a method to obtain a single large nanofibre grown by PECVD (MWCNF) in each via hole. Electrical measurements are performed on CVD and PECVD grown carbon nanotubes. The role of electron-phonon interaction in these devices is also briefly discussed.

Paper Details

Date Published: 4 September 2008
PDF: 10 pages
Proc. SPIE 7037, Carbon Nanotubes and Associated Devices, 70370D (4 September 2008); doi: 10.1117/12.799100
Show Author Affiliations
J. C. Coiffic, CEA, Leti-Minatec (France)
L. E. Foa Torres, CEA, Iniac (France)
H. Le Poche, CEA, Liten (France)
M. Fayolle, CEA, Leti-Minatec (France)
S. Roche, CEA, Iniac (France)
S. Maitrejean, CEA, Leti-Minatec (France)
S. Roualdes, IEM (France)
A. Ayral, IEM (France)

Published in SPIE Proceedings Vol. 7037:
Carbon Nanotubes and Associated Devices
Manijeh Razeghi; Didier Pribat; Young Hee Lee, Editor(s)

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