Share Email Print

Proceedings Paper

45nm node registration metrology on LTEM EUV reticles
Author(s): Frank Laske; Hiroshi Kinoshita; Naoki Nishida; Daisuke Kenmochi; Hitoshi Ota; Yukitake Tanioka; Slawomir Czerkas; Karl-Heinrich Schmidt; Dieter Adam; Klaus-Dieter Roeth
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Reticles for the 65nm technology node are already in production and leading edge mask shops will complete R&D for 45nm technology node reticles very soon. The specifications for registration for this new node are expected to be much tighter than for previous generation reticles. New generation lithography (e-beam) tools will become available soon to support the writing accuracy as required for 45nm node reticles. Tighter registration tolerances require a next generation registration metrology tool, providing measurement performance to fulfill the specification of 45nm node and beyond. EUV lithography might become the backup solution for next generations 32nm and 22nm nodes in order to overcome the resolution limits of optical lithography. Considering the extremely tight mask to mask overlay tolerances of EUV reticles, we will demonstrate the performance of the LMS IPRO4 for registration metrology on EUV masks. We will present the actual system performance of the LMS IPRO4 on high-end Hoya EUV masks with various substrate materials. A detailed analysis of measurement precision and accuracy performance of the new LMS IPRO4 will be provided. Additionally, we will present a comparison of measurement performance of EUV masks from quartz and EUV masks from new LTEM material used as substrate. LTEM substrate enables to analyze soaking effects related to temperature differences between stage and the mask itself. Results of an experiment will be shown, where we compare the soaking time needed before starting the measurement process using quartz material and LTEM.

Paper Details

Date Published: 2 May 2008
PDF: 8 pages
Proc. SPIE 6792, 24th European Mask and Lithography Conference, 67920Y (2 May 2008); doi: 10.1117/12.798939
Show Author Affiliations
Frank Laske, Vistec Semiconductor Systems GmbH (Germany)
Hiroshi Kinoshita, Hoya Corp. (Japan)
Naoki Nishida, Hoya Corp. (Japan)
Daisuke Kenmochi, Hoya Corp. (Japan)
Hitoshi Ota, Dai Nippon Screen Manufacturing Co. Ltd. (Japan)
Yukitake Tanioka, Dai Nippon Screen Manufacturing Co. Ltd. (Japan)
Slawomir Czerkas, Vistec Semiconductor Systems GmbH (Germany)
Karl-Heinrich Schmidt, Vistec Semiconductor Systems GmbH (Germany)
Dieter Adam, Vistec Semiconductor Systems GmbH (Germany)
Klaus-Dieter Roeth, Vistec Semiconductor Systems GmbH (Germany)

Published in SPIE Proceedings Vol. 6792:
24th European Mask and Lithography Conference

© SPIE. Terms of Use
Back to Top