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Proceedings Paper

Status of EUVL reticle chucking
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Paper Abstract

Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for Next-Generation Lithography in the sub-45-nm regime. Successful implementation of this technology will depend upon advancements in many areas, including the quality of the mask system to control image placement errors. For EUVL, the nonflatness of both the mask and chuck is critical, due to the nontelecentric illumination during exposure. The industry is proposing to use an electrostatic chuck to support and flatten the mask in the exposure tool. The focus of this research is to investigate the clamping ability of a pin-type chuck, both experimentally and with the use of numerical simulation tools, i.e., finite element modeling. A status report on electrostatic chucking is presented, including the results obtained during repeatability studies and long-term chucking experiments.

Paper Details

Date Published: 2 May 2008
PDF: 14 pages
Proc. SPIE 6792, 24th European Mask and Lithography Conference, 67920X (2 May 2008); doi: 10.1117/12.798937
Show Author Affiliations
Roxann L. Engelstad, Univ. of Wisconsin, Madison (United States)
Jaewoong Sohn, SEMATECH (United States)
Jacob R. Zeuske, Univ. of Wisconsin, Madison (United States)
Venkata Siva Battula, Univ. of Wisconsin, Madison (United States)
Pradeep Vukkadala, Univ. of Wisconsin, Madison (United States)
Chris K. Van Peski, SEMATECH (United States)
Kevin J. Orvek, SEMATECH (United States)
Kevin T. Turner, Univ. of Wisconsin, Madison (United States)
Andrew R. Mikkelson, Univ. of Wisconsin, Madison (United States)
Madhura Nataraju, Univ. of Wisconsin, Madison (United States)


Published in SPIE Proceedings Vol. 6792:
24th European Mask and Lithography Conference

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