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Proceedings Paper

High resolution patterning and simulation on Mo/Si multilayer for EUV masks
Author(s): N. Tsikrikas; G. P. Patsis; I. Raptis; A. Gerardino
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Paper Abstract

Electron Beam writing process is essential for EUV mask manufacturing and direct writing. Electron beam lithography simulation tools can provide critical information in the way of obtaining high accuracy results. In the present work a software tool which performs e-beam writing simulation, resist development simulation and automated metrology has been developed and applied in the case of Mo/Si multilayer substrates. Simulation results are compared with experimental ones in order to evaluate the simulation's accuracy.

Paper Details

Date Published: 2 May 2008
PDF: 7 pages
Proc. SPIE 6792, 24th European Mask and Lithography Conference, 679216 (2 May 2008); doi: 10.1117/12.798804
Show Author Affiliations
N. Tsikrikas, Institute of Microelectronics, NCSR Demokritos (Greece)
G. P. Patsis, Institute of Microelectronics, NCSR Demokritos (Greece)
I. Raptis, Institute of Microelectronics, NCSR Demokritos (Greece)
A. Gerardino, Istituto di Fotonica e Nanotecnologie (Italy)


Published in SPIE Proceedings Vol. 6792:
24th European Mask and Lithography Conference

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