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Proceedings Paper

Optical proximity correction for 0.13 um SiGe:C BiCMOS
Author(s): S. Geisler; J. Bauer; U. Haak; U. Jagdhold; R. Pliquett; E. Matthus; R. Schrader; H. Wolf; U. Baetz; H. Beyer; M. Niehoff
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Paper Abstract

We present results for a rule based optical proximity (RB-OPC) and a model based optical proximity correction (MB-OPC) for 0.13 μm SiGe:C BiCMOS technology. The technology provides integrated high performance heterojunction bipolar transistors (HBTs) with cut-off frequencies up to 300 GHz. This requires an optical proximity correction of critical layers with an excellent mask quality. This paper provides results of the MB-OPC and RB-OPC using the Mentor Calibre software in comparison to uncorrected structures (NO-OPC). We show RB- and MB-OPC methods for the shallow trench and gate layer, and the RB-OPC for the emitter window-, contact- and metal layers. We will discuss the impact of the RB- and MB-OPC rules on the process margin and yield in the 0.13 μm SiGe:C BiCMOS technology, based on CD-SEM data obtained from the evaluation of the RB- and MB-OPC corrected SRAM cells.

Paper Details

Date Published: 2 May 2008
PDF: 6 pages
Proc. SPIE 6792, 24th European Mask and Lithography Conference, 679210 (2 May 2008); doi: 10.1117/12.798786
Show Author Affiliations
S. Geisler, Technische Fachhochschule Wildau (Germany)
IHP Microelectronics (Germany)
J. Bauer, IHP Microelectronics (Germany)
U. Haak, IHP Microelectronics (Germany)
U. Jagdhold, IHP Microelectronics (Germany)
R. Pliquett, IHP Microelectronics (Germany)
E. Matthus, IHP Microelectronics (Germany)
R. Schrader, Photronics MZD GmbH (Germany)
H. Wolf, Photronics MZD GmbH (Germany)
U. Baetz, Fraunhofer IPMS (Germany)
H. Beyer, Technische Fachhochschule Wildau (Germany)
M. Niehoff, Mentor Graphics (Germany)

Published in SPIE Proceedings Vol. 6792:
24th European Mask and Lithography Conference
Uwe F.W. Behringer, Editor(s)

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