Share Email Print
cover

Proceedings Paper

Key improvement schemes of accuracies in EB mask writing for double patterning lithography
Author(s): Hitoshi Sunaoshi; Takashi Kamikubo; Rieko Nishimura; Kaoru Tsuruta; Takehiko Katsumata; Takayuki Ohnishi; Hirohito Anze; Jun Takamatsu; Shusuke Yoshitake; Shuichi Tamamushi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Double pattering or exposure methodologies are being adopted to extend 193nm optical lithography. These methodologies require much tighter image-placement accuracy and Critical Dimension (CD) controls on mask than the conventional single exposure technique. Our experiments indicate that the global image placement drift induced by the time elapsed in mask writing is the dominant factor that degrades image-placement accuracy. In-situ grid measurement method is being proposed to suppress this time dependent drift. Resist charging effect is also an important error factor. While it can be reduced by charge dissipation layer (CDL), further feasibility study is required for using CDL to overcome certain side-effects pertaining to CDL. High dose resist improves local CD uniformity and pattern fidelity. However, mask writing time becomes longer with lower sensitivity. To satisfy conflicting issues, throughput and CD uniformity, high sensitivity CAR which has short acid diffusion length is desirable. Shortening acid diffusion length is essential for achieving good pattern resolution as well as good CD uniformity. This paper will address the results of error source analyses and key schemes of accuracy improvements in photo-mask manufacturing using NuFlare Technology's EB mask writers.

Paper Details

Date Published: 2 May 2008
PDF: 7 pages
Proc. SPIE 6792, 24th European Mask and Lithography Conference, 679208 (2 May 2008); doi: 10.1117/12.798521
Show Author Affiliations
Hitoshi Sunaoshi, NuFlare Technology, Inc. (Japan)
Takashi Kamikubo, NuFlare Technology, Inc. (Japan)
Rieko Nishimura, NuFlare Technology, Inc. (Japan)
Kaoru Tsuruta, NuFlare Technology, Inc. (Japan)
Takehiko Katsumata, NuFlare Technology, Inc. (Japan)
Takayuki Ohnishi, NuFlare Technology, Inc. (Japan)
Hirohito Anze, NuFlare Technology, Inc. (Japan)
Jun Takamatsu, NuFlare Technology, Inc. (Japan)
Shusuke Yoshitake, NuFlare Technology, Inc. (Japan)
Shuichi Tamamushi, NuFlare Technology, Inc. (Japan)


Published in SPIE Proceedings Vol. 6792:
24th European Mask and Lithography Conference

© SPIE. Terms of Use
Back to Top