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Proceedings Paper

Spin-dependent tunneling through a spin-orbit-split barrier
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Paper Abstract

We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling process can become rather involved: Depending on the crystallographic direction, the incident wave experiences spin filtering during the tunneling or a spin precession around an effective magnetic field. These results open stimulating perspectives for spin manipulation in tunnel devices.

Paper Details

Date Published: 30 August 2008
PDF: 8 pages
Proc. SPIE 7036, Spintronics, 70360M (30 August 2008); doi: 10.1117/12.797997
Show Author Affiliations
Henri-Jean Drouhin, Ecole Polytechnique, LSI, CNRS et CEA, DSM, DRECAM (France)
Guy Fishman, Univ. Paris-Sud, IEF, CNRS (France)
T. L. Hoai Nguyen, Ecole Polytechnique, LSI, CNRS et CEA, DSM, DRECAM (France)
Univ. Paris-Sud, IEF, CNRS (France)
Jean-Eric Wegrowe, Ecole Polytechnique, LSI, CNRS et CEA, DSM, DRECAM (France)


Published in SPIE Proceedings Vol. 7036:
Spintronics
Manijeh Razeghi; Henri-Jean M. Drouhin; Jean-Eric Wegrowe, Editor(s)

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