Share Email Print
cover

Proceedings Paper

Metalorganic chemical vapor deposition of GaN and InGaN on ZnO substrate using Al2O3 as a transition layer
Author(s): Nola Li; Shen-Jie Wang; Chung-Lung Huang; Zhe Chuan Feng; Adriana Valencia; Jeff Nause; Christopher Summers; Ian Ferguson
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Al2O3 films were deposited on the Zn face of ZnO (0001) substrates as a transition layer by atomic layer deposition (ALD). The as-deposited 20 and 50nm Al2O3 films were transformed to polycrystalline α-Al2O3 phase after optimal annealing at 1100°C after 10 and 20 minutes, respectively, as identified by high resolution x-ray diffraction (HRXRD). Furthermore, GaN and InGaN layers were grown on annealed 20 and 50nm Al2O3 deposited ZnO substrates by metalorganic chemical vapor deposition (MOCVD) using NH3 as a nitrogen source at high growth temperature. Wurtzite GaN was only seen on the 20nm Al2O3/ZnO substrates. Room temperature photoluminescence (RT-PL) shows the near band-edge emission of GaN red-shifted, which might be from oxygen incorporation forming a shallow donor-related level in GaN. Raman scattering also indicated the presence of a wellcrystallized GaN layer on the 20nm Al2O3/ZnO substrate. InGaN was grown on bare ZnO as well as Al2O3 deposited ZnO substrates. HRXRD measurements revealed that the thin Al2O3 layer after annealing was an effective transition layer for the InGaN films grown epitaxially on ZnO substrates. Auger Electron Spectroscopy (AES) atomic depth profile shows a decrease in Zn in the InGaN layer. Moreover, (0002) InGaN layers were successfully grown on 20nm Al2O3/ZnO substrates after 10min annealing in a high temperature furnace.

Paper Details

Date Published: 2 September 2008
PDF: 6 pages
Proc. SPIE 7058, Eighth International Conference on Solid State Lighting, 70580K (2 September 2008); doi: 10.1117/12.797946
Show Author Affiliations
Nola Li, Georgia Institute of Technology (United States)
Shen-Jie Wang, Georgia Institute of Technology (United States)
Chung-Lung Huang, National Taiwan Univ. (Taiwan)
Zhe Chuan Feng, National Taiwan Univ. (Taiwan)
Adriana Valencia, Cermet, Inc. (United States)
Jeff Nause, Cermet, Inc. (United States)
Christopher Summers, Georgia Institute of Technology (United States)
Ian Ferguson, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 7058:
Eighth International Conference on Solid State Lighting
Ian T. Ferguson; Tsunemasa Taguchi; Ian E. Ashdown; Seong-Ju Park, Editor(s)

© SPIE. Terms of Use
Back to Top