Share Email Print

Proceedings Paper

Frontside-illuminated quantum well photodetector for FIR range
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have demonstrated the operation of a far-infrared frontside-illuminated GaAs/AlGaAs quantum well photodetector based on intersubband absorption in a quantum well (QW) with a targeted peak frequency of 3 THz (wavelength: ~100 μm). A multiple quantum well structure consists of 20 periods of 18 nm QWs interleaved by 80 nm barriers with an Al alloy content of 2%. We measured the following performance characteristics: dark current, responsivity, and spectral response. A responsivity of 13 mA/W at an electric bias of 40 mV and an operating temperature of 3 K was obtained with a peak response close to the designed detection frequency. The dark current density was a few μA/cm2 and was limited by thermally assisted tunneling through the barriers. We looked also at possible designs to optimize the device's performance.

Paper Details

Date Published: 3 September 2008
PDF: 7 pages
Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550M (3 September 2008); doi: 10.1117/12.797653
Show Author Affiliations
Mikhail Patrashin, National Institute of Information and Communications Technology (Japan)
Iwao Hosako, National Institute of Information and Communications Technology (Japan)

Published in SPIE Proceedings Vol. 7055:
Infrared Systems and Photoelectronic Technology III
Eustace L. Dereniak; Randolph E. Longshore; Ashok K. Sood; John P. Hartke; Paul D. LeVan, Editor(s)

© SPIE. Terms of Use
Back to Top