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Proceedings Paper

Optoelectronic properties of ion-etched silicon surfaces
Author(s): V. G. Zhitaryuk; V. M. Hodovanyuk; I. V. Doktorovych
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Paper Abstract

The paper studies the influence of mechanical treatment-deformed near-surface crystal layer of silicon surfaces on photoelectric properties of semiconductor optical radiation detectors made on the above surfaces. This layer is removed by the method of ion etching of surfaces by vacuum glow discharge. The basic parameters and characteristics of detectors made on reconstructed surfaces are studied, namely: power characteristic nonlinearity and its dynamic range, luxampere characteristic, dark current and spectral characteristic. Considerable positive effect of such etching on the above parameters and characteristics is established, allowing widely expanded application of these photodetectors in optical investigations.

Paper Details

Date Published: 22 April 2008
PDF: 6 pages
Proc. SPIE 7008, Eighth International Conference on Correlation Optics, 70081D (22 April 2008); doi: 10.1117/12.797227
Show Author Affiliations
V. G. Zhitaryuk, Chernivtsi National Univ. (Ukraine)
V. M. Hodovanyuk, Central Design Bureau Rhythm (Ukraine)
I. V. Doktorovych, Central Design Bureau Rhythm (Ukraine)

Published in SPIE Proceedings Vol. 7008:
Eighth International Conference on Correlation Optics

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