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Proceedings Paper

Reactively sputtered aluminium nitride films for spectral emission control
Author(s): S. Zhao; C.-G. Ribbing
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Paper Abstract

Aluminium nitride films, 0.8-1.8 μm thick, have been deposited by reactive, magnetron sputtring of aluminium in an argon-nitrogen atmosphere. The sputtered films exhibit a Reststrahlen band in the wavelength range 11-16 μm. We have investigated the possibilities to use different substrate materials and dielectric coatings to extend this interval to the entire upper thermal window 8-13 μm and a secondary interference maximum in the 3-5 μm range, i.e. the lower thermal window. Our results indicate a potential for the use of AlN-films in applications that benefit from wavelength selective emittance, e.g. IR signature control and frost prevention.

Paper Details

Date Published: 25 September 2008
PDF: 9 pages
Proc. SPIE 7101, Advances in Optical Thin Films III, 71011F (25 September 2008); doi: 10.1117/12.797068
Show Author Affiliations
S. Zhao, Uppsala Univ. (Sweden)
C.-G. Ribbing, Uppsala Univ. (Sweden)


Published in SPIE Proceedings Vol. 7101:
Advances in Optical Thin Films III
Norbert Kaiser; Michel Lequime; H. Angus Macleod, Editor(s)

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