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Proceedings Paper

MoSi absorber photomask for 32nm node
Author(s): Toshio Konishi; Yosuke Kojima; Hiroyuki Takahashi; Masato Tanabe; Takashi Haraguchi; Matthew Lamantia; Yuichi Fukushima; Yoshimitsu Okuda
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Paper Abstract

The development of semiconductor process for 32nm node is in progress. Immersion lithography has been introduced as an extension of 193nm lithograpy. In addition, DPL (Double patterning lithography) is becoming a strong candidate of next generation lithography. The extension of optical lithography increases more mask complexity and tighter specification of photomasks. CD performance is the most important issue in the advanced photomask technology. However, it is expected that conventional mask cannot satisfy the required mask specifications for 32nm node and beyond. Most of CD errors are contributed to the dry etching process. Mask CD variation is greatly influenced by the loading effect from dry etching of the absorber. As the required accuracy of the mask arises, Cr absorber thickness has been gradually thinner. CD linearity with the thinner Cr absorber thickness has better performance. However, it is difficult to apply thinner Cr absorber thickness simply under the condition of OD > 3, which is needed for wafer printing. So, we adopted MoSi absorber instead of conventional Cr absorber, because MoSi absorber has less micro and global loading effect than that of Cr absorber. By using MoSi absorber, we can reduce Cr thickness as a hardmask. The thinner Cr hardmask allows for reduce resist thickness and become same condition for conventional EB resist lithography. The lithography performances were confirmed by the simulation and wafer printing. The new MoSi absorber mask behaves similar to the conventional Cr absorber mask. The adoption of super thin Cr as a hardmask made it possible to reduce resist thickness. By the application of the thin resist and the latest tools, we'll improve the mask performance to meet the 32 nm generation specification.

Paper Details

Date Published: 19 May 2008
PDF: 12 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702803 (19 May 2008); doi: 10.1117/12.796010
Show Author Affiliations
Toshio Konishi, Toppan Printing Co., Ltd. (Japan)
Yosuke Kojima, Toppan Printing Co., Ltd. (Japan)
Hiroyuki Takahashi, Toppan Printing Co., Ltd. (Japan)
Masato Tanabe, Toppan Printing Co., Ltd. (Japan)
Takashi Haraguchi, Toppan Printing Co., Ltd. (Japan)
Matthew Lamantia, Toppan Printing Co., Ltd. (Japan)
Yuichi Fukushima, Toppan Printing Co., Ltd. (Japan)
Yoshimitsu Okuda, Toppan Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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