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Proceedings Paper

Strong photoluminescence at 1540 nm from Er-doped amorphous silicon oxycarbide: a novel silicon material for photonic applications
Author(s): Spyros Gallis; Vasileios Nikas; Himani Suhag; Mengbing Huang; Alain E. Kaloyeros
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Paper Abstract

The present investigators have previously reported on strong room-temperature luminescence at 1540 nm from erbium-doped amorphous silicon oxycarbide (a-SiCxOy:Er) thin films. An enhancement of ~20 times was found for asgrown SiC0.5O1.0:Er compared to SiO2:Er control samples under continuous wavelength (cw) pumping at 496.5 nm. Here, we report the effects of post-deposition annealing on the photoluminescence (PL) properties of Er-doped silicon oxycarbide. The amorphous SiCxOy films were grown by thermal chemical vapor deposition (TCVD) at 800°C and postdeposition annealing was conducted in the temperature range 500-1100°C. The thin films were then implanted with 260keV Er ions and subsequently annealed at 900°C. Strong room-temperature photoluminescence around 1540 nm was observed, with efficient Er+3 ion excitation occurring for pumping wavelengths ranging from 460 nm to 600 nm. Modeling of the power dependence of Er luminescence yielded an effective Er excitation cross-section about four orders of magnitude larger than that for a direct optical excitation of Er+3 ions. Additionally, Fourier transform infrared spectroscopy (FTIR) studies of post-deposition annealed samples revealed a strong correlation between the Er PL intensity and the C-O bond concentration in the materials. The work suggests a novel method for achieving efficient Er luminescence in Si-based materials through controlled engineering of the Si-C-O system.

Paper Details

Date Published: 4 September 2008
PDF: 8 pages
Proc. SPIE 7030, Nanophotonic Materials V, 703004 (4 September 2008); doi: 10.1117/12.795560
Show Author Affiliations
Spyros Gallis, Univ. at Albany, SUNY (United States)
Vasileios Nikas, Univ. at Albany, SUNY (United States)
Himani Suhag, Univ. at Albany, SUNY (United States)
Mengbing Huang, Univ. at Albany, SUNY (United States)
Alain E. Kaloyeros, Univ. at Albany, SUNY (United States)


Published in SPIE Proceedings Vol. 7030:
Nanophotonic Materials V
Zeno Gaburro; Stefano Cabrini; Dmitri Talapin, Editor(s)

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