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Proceedings Paper

Surface and material characteristics of Ga2O3 thin films on GaAs
Author(s): Ping-Fong Huang; Yen-Ting Chen; H. Y. Lee; Zhe Chuan Feng; Hao-Hsiung Lin; Weijie Lu
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Paper Abstract

Surface and material properties of dielectric Ga2O3 thin films deposited onto GaAs substrate with different annealing temperature were studied via a variety of techniques, including X-ray diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX). The effects of annealing are investigated. The increase of ratio of oxygen to gallium assuredly as the annealing temperature increased was found. The relationship between the interface quality and annealing temperature is identified.

Paper Details

Date Published: 29 August 2008
PDF: 8 pages
Proc. SPIE 7067, Advances in Thin-Film Coatings for Optical Applications V, 70670M (29 August 2008); doi: 10.1117/12.795535
Show Author Affiliations
Ping-Fong Huang, National Taiwan Univ. (Taiwan)
Yen-Ting Chen, National Taiwan Univ. (Taiwan)
H. Y. Lee, National Formosa Univ. (Taiwan)
Zhe Chuan Feng, National Taiwan Univ. (Taiwan)
Hao-Hsiung Lin, National Taiwan Univ. (Taiwan)
Weijie Lu, Fisk Univ. (United States)

Published in SPIE Proceedings Vol. 7067:
Advances in Thin-Film Coatings for Optical Applications V
Jennifer D. T. Kruschwitz; Michael J. Ellison, Editor(s)

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