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Proceedings Paper

The x-ray performance of high resistivity (high-rho) scientific CCDs
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Paper Abstract

e2v technologies have recently been developing large area (2k*4k), high resistivity (>8 kΩcm) silicon CCDs intended for infrared astronomy. The use of high resistivity silicon allows for a greater device thickness, allowing deeper, or full, depletion across the CCD that significantly improves the red wavelength sensitivity. The increased depletion in these CCDs also improves the quantum efficiency for incident X-ray photons of energies above 5 keV, whilst maintaining spectral resolution. The use of high resistivity silicon would therefore be advantageous for use in future X-ray astronomy missions and other applications. This paper presents the measured X-ray performance of the high resistivity CCD247 for X-ray photons of energies between 5.4 keV to 17.4 keV. Here we describe the laboratory experiment and results obtained to determine the responsivity, noise, effective depletion depth and quantum efficiency of the CCD247.

Paper Details

Date Published: 22 July 2008
PDF: 11 pages
Proc. SPIE 7021, High Energy, Optical, and Infrared Detectors for Astronomy III, 70211N (22 July 2008); doi: 10.1117/12.795455
Show Author Affiliations
Neil Murray, Brunel Univ. (United Kingdom)
Andrew D. Holland, Planetary and Space Sciences Research Institute, Open Univ. (United Kingdom)
David Burt, e2v technologies (United Kingdom)
Peter Pool, e2v technologies (United Kingdom)
Paul Jorden, e2v technologies (United Kingdom)
Pritesh Mistry, e2v technologies (United Kingdom)

Published in SPIE Proceedings Vol. 7021:
High Energy, Optical, and Infrared Detectors for Astronomy III
David A. Dorn; Andrew D. Holland, Editor(s)

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