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Proceedings Paper

Fabrication, characterization of II-VI semiconductor nanowires and applications in infrared focal plane arrays
Author(s): Michael M. Crouse; Thomas L. James; David Crouse
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Paper Abstract

The fragile nature of alumina and the intrinsic Al2O3 barrier layer at the pore bases has hindered its use in optoelectronic devices. In this work, these issues have been addressed by the development of a nanoporous alumina template directly on a silicon substrate with platinum electrodes at the pore bases. This template was then used to perform dc galvanostatic electrochemical deposition of II-VI semiconductor heterostructure nanowires that were then used to fabricate pixilated detector arrays.

Paper Details

Date Published: 26 August 2008
PDF: 5 pages
Proc. SPIE 7095, Nanophotonics and Macrophotonics for Space Environments II, 70950J (26 August 2008); doi: 10.1117/12.795399
Show Author Affiliations
Michael M. Crouse, Phoebus Optoelectronics LLC (United States)
Thomas L. James, Phoebus Optoelectronics LLC (United States)
David Crouse, The City College of New York (United States)


Published in SPIE Proceedings Vol. 7095:
Nanophotonics and Macrophotonics for Space Environments II
Edward W. Taylor; David A. Cardimona, Editor(s)

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