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Proceedings Paper

Scaling behavior and negative gain of NAPD
Author(s): X. Guo; S. G. Ma; X. Y. Zheng; K. L. Wang
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Paper Abstract

The size-dependent and lamination-dependent I-V curves of nano-multiplication-region avalanche photodiode (NAPD) were measured with the sized of 100nm, 200nm, 1μm, and 10μm. The gain increases with the decrease of the multiplication-region size and illumination power. These data indicate the NAPD possesses the advantages of high gain and high sensitivity.

Paper Details

Date Published: 9 September 2008
PDF: 7 pages
Proc. SPIE 7039, Nanoengineering: Fabrication, Properties, Optics, and Devices V, 70390N (9 September 2008); doi: 10.1117/12.795173
Show Author Affiliations
X. Guo, Univ. of California, Los Angeles (United States)
Beijing Univ. of Technology (China)
S. G. Ma, Univ. of California, Los Angeles (United States)
X. Y. Zheng, Univ. of California, Los Angeles (United States)
Jet Propulsion Lab. (United States)
K. L. Wang, Univ. of California, Los Angeles (United States)


Published in SPIE Proceedings Vol. 7039:
Nanoengineering: Fabrication, Properties, Optics, and Devices V
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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