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Proceedings Paper

Highly efficient (infra)-red-conversion of InGaN light emitting diodes by nanocrystals, enhanced by color selective mirrors
Author(s): J. Roither; M. V. Kovalenko; W. Heiss
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Paper Abstract

Colloidal nanocrystal layers deposited onto the enclosure of InGaN light emitting diodes are demonstrated to operate as nano-phosphors for color conversion with high color stability. Dependent on the choice of the nanocrystal materials, either CdSe/ZnS or PbS nanocrystals are applied, the diode emission at 470 nm is converted to the red or to infrared light, with similar quantum efficiencies. The color conversion is further improved by dielectric mirrors with high reflectivity at the emission band of the nanocrystals, resulting in an almost doubling of the nanocrystal light extraction from the devices, which increases the nanocrystal device efficiency up to 19.1%.

Paper Details

Date Published: 2 September 2008
PDF: 6 pages
Proc. SPIE 7058, Eighth International Conference on Solid State Lighting, 70580Y (2 September 2008); doi: 10.1117/12.794987
Show Author Affiliations
J. Roither, Univ. of Linz (Austria)
M. V. Kovalenko, Univ. of Linz (Austria)
W. Heiss, Univ. of Linz (Austria)

Published in SPIE Proceedings Vol. 7058:
Eighth International Conference on Solid State Lighting
Ian T. Ferguson; Tsunemasa Taguchi; Ian E. Ashdown; Seong-Ju Park, Editor(s)

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