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Proceedings Paper

Effect of PdZn film on the performance of green light-emitting diodes
Author(s): Ja-Yeon Kim; Min-Ki Kwon; Chu Young Cho; Sang-Jun Lee; Seong-Ju Park; Sunwoon Kim; Je Won Kim; Yong Chun Kim
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Paper Abstract

PdZn was used to improve the electrical properties of p-GaN annealed at low activation temperature for high efficiency green light-emitting diodes (LEDs). A hole concentration of p-GaN annealed at 600 °C with PdZn was almost 28 times higher than that of p-GaN annealed at 800 °C without PdZn. SIMS analysis showed that hydrogen concentration in p-GaN annealed with PdZn is decreased compared to that without using PdZn because the PdZn enhances hydrogen desorption from the Mg-doped p-GaN film at low temperature. The green MQW LED annealed at 600 °C using PdZn showed improved electrical characteristic and optical output power compared to that annealed at 800 °C without using PdZn. These results are attributed to the increase of hole concentration of p-GaN due to removal of hydrogen in p-GaN by PdZn and the decrease in thermal damage of MQW at low activation temperature.

Paper Details

Date Published: 2 September 2008
PDF: 6 pages
Proc. SPIE 7058, Eighth International Conference on Solid State Lighting, 70580I (2 September 2008); doi: 10.1117/12.794535
Show Author Affiliations
Ja-Yeon Kim, Gwangju Institute of Science and Technology (Korea, Republic of)
Min-Ki Kwon, Gwangju Institute of Science and Technology (Korea, Republic of)
Chu Young Cho, Gwangju Institute of Science and Technology (Korea, Republic of)
Sang-Jun Lee, Gwangju Institute of Science and Technology (Korea, Republic of)
Seong-Ju Park, Gwangju Institute of Science and Technology (Korea, Republic of)
Sunwoon Kim, Samsung Electro-Mechanics Co., Ltd. (Korea, Republic of)
Je Won Kim, Samsung Electro-Mechanics Co., Ltd. (Korea, Republic of)
Yong Chun Kim, Samsung Electro-Mechanics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7058:
Eighth International Conference on Solid State Lighting
Ian T. Ferguson; Tsunemasa Taguchi; Ian E. Ashdown; Seong-Ju Park, Editor(s)

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