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Proceedings Paper

Computational design of the intermediate-band solar cells based on the quantum dot superlattices
Author(s): Qinghui Shao; Alexander A. Balandin; Alexander I. Fedoseyev; Marek Turowski
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Paper Abstract

Intermediate-band (IB) solar cells were predicted to have the photovoltaic (PV) efficiency exceeding the Shockley-Queisser limit for a single junction cell. A possible practical implementation of the IB solar cells can be based on the quantum dot superlattices (QDS). The parameters of such QDS structure have to be carefully tuned in order to achieve the desired charge carrier dispersion required for the IB solar cell operation. We used the first-principle theoretical models for calculating the carrier states and light absorption in QDS. This approach allowed us to determine the actual dimensions of the quantum dots and the inter-dot spacing for inducing the carrier miniband in the band-gap region where the miniband can play the role of the IB. Using the Shockley-Queisser detailed balance theory we determined that the upper-bound PV efficiency of such IB solar cells can be as high as ~ 51%. The required QDS dimensions for the IB implementation on the basis of InAsN/GaAsSb are technologically challenging but feasible: ~ 2 - 6 nm. The proposed computational design approach may help with implementation of other solar cell concepts for advanced light-to-energy conversion enabled by nanostructures.

Paper Details

Date Published: 11 September 2008
PDF: 8 pages
Proc. SPIE 7047, Nanoscale Photonic and Cell Technologies for Photovoltaics, 70470B (11 September 2008); doi: 10.1117/12.794233
Show Author Affiliations
Qinghui Shao, Univ. of California, Riverside (United States)
Alexander A. Balandin, Univ. of California, Riverside (United States)
Alexander I. Fedoseyev, CFD Research Corp. (United States)
Marek Turowski, CFD Research Corp. (United States)


Published in SPIE Proceedings Vol. 7047:
Nanoscale Photonic and Cell Technologies for Photovoltaics
Loucas Tsakalakos, Editor(s)

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