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Proceedings Paper

Very high performance LWIR and VLWIR Type-II InAs/GaSb superlattice photodiodes with M-structure barrier
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Paper Abstract

LWIR and VLWIR type II InAs/GaSb superlattice photodetectors have for long time suffered from a high dark current level and a low dynamic resistance which hampers the its emergence to the infrared detection and imaging industry. However, with the use of M-structure superlattice, a new type II binary InAs/GaSb/AlSb superlattice design, as an effective blocking barrier, the dark current in type II superlattice diode has been significantly reduced. We have obtained comparable differential resistance product to the MCT technology at the cut-off wavelength of 10 and 14μm. Also, this new design is compatible with the optical optimization scheme, leading to high quantum efficiency, high special detectivity devices for photon detectors and focal plane arrays.

Paper Details

Date Published: 3 September 2008
PDF: 12 pages
Proc. SPIE 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI, 708205 (3 September 2008); doi: 10.1117/12.794210
Show Author Affiliations
Binh-Minh Nguyen, Northwestern Univ. (United States)
Darin Hoffman, Northwestern Univ. (United States)
Pierre-Yves Delaunay, Northwestern Univ. (United States)
Edward Kwei-wei Huang, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 7082:
Infrared Spaceborne Remote Sensing and Instrumentation XVI
Marija Strojnik, Editor(s)

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