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Proceedings Paper

High frequency carbon nanotube devices
Author(s): M. F. Goffman; N. Chimot; E. Mile; M. C. Monteverde; J.-P. Bourgoin; V. Derycke
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Paper Abstract

We investigate high frequency electrical and mechanical performances of carbon nanotube based devices. Using configurations with multiple single-wall nanotubes in parallel, we show that HF nanotube transistors with intrinsic cut-off frequencies as high as 30 GHz can be obtained on rigid substrates. Adapting our process to plastic substrates, we also obtained highly flexible HF transistors showing constant transconductances up to at least 6 GHz, as-measured cut-off frequencies as high as 1 GHz (5-8 GHz after de-embedding) and stable DC performances upon bending. We probed electromechanical properties of individual suspended carbon multiwall nanotubes by using a modified AFM. DC deflection measurements on different devices are in agreement with a continuum model prediction and consistent with a Young's modulus of 0.4 TPa. Preliminary HF measurements on a doubly clamped device showed a resonant frequency of 200MHz consistent with a Young's modulus of 0.43 TPa. This implies that built-in mechanical stress in the case of MWNTs is negligeable.

Paper Details

Date Published: 4 September 2008
PDF: 13 pages
Proc. SPIE 7037, Carbon Nanotubes and Associated Devices, 703702 (4 September 2008); doi: 10.1117/12.794169
Show Author Affiliations
M. F. Goffman, Lab. d'Electronique Moléculaire, DSM, IRAMIS, SPEC, CEA-Saclay (France)
N. Chimot, Lab. d'Electronique Moléculaire, DSM, IRAMIS, SPEC, CEA-Saclay (France)
E. Mile, Lab. d'Electronique Moléculaire, DSM, IRAMIS, SPEC, CEA-Saclay (France)
M. C. Monteverde, Lab. d'Electronique Moléculaire, DSM, IRAMIS, SPEC, CEA-Saclay (France)
J.-P. Bourgoin, Lab. d'Electronique Moléculaire, DSM, IRAMIS, SPEC, CEA-Saclay (France)
V. Derycke, Lab. d'Electronique Moléculaire, DSM, IRAMIS, SPEC, CEA-Saclay (France)


Published in SPIE Proceedings Vol. 7037:
Carbon Nanotubes and Associated Devices
Manijeh Razeghi; Didier Pribat; Young Hee Lee, Editor(s)

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