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Proceedings Paper

Simulation of the InGaN-based tandem solar cells
Author(s): Xiaoming Shen; Shuo Lin; Fubin Li; Yiming Wei; Shuiku Zhong; Haibin Wan; Jiangong Li
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Paper Abstract

In this work, key properties of InxGa1-xN tandem solar cells (SCs) (single junction, double junctions and triple junctions) were simulated by employing AMPS-1D software, including I-V characteristic, efficiency, band structure, built-in electric field etc. We compared the results of our simulation with the results of other theoretical calculations published in the literature and analysed the causes of the differences among these results. We try to find some useful information related to the important parameters of InGaN SCs, such as the band gap configuration and thickness selection. This work may help the progress in the preparation of the InGaN-based high efficiency solar cells.

Paper Details

Date Published: 10 September 2008
PDF: 8 pages
Proc. SPIE 7045, Photovoltaic Cell and Module Technologies II, 70450E (10 September 2008); doi: 10.1117/12.793997
Show Author Affiliations
Xiaoming Shen, Guangxi Univ. (China)
Shuo Lin, Guangxi Univ. (China)
Fubin Li, GuangXi Univ. (China)
Yiming Wei, Guangxi Univ. (China)
Shuiku Zhong, Guangxi Univ. (China)
Haibin Wan, Guangxi Univ. (China)
Jiangong Li, Guangxi Univ. (China)


Published in SPIE Proceedings Vol. 7045:
Photovoltaic Cell and Module Technologies II
Bolko von Roedern; Alan E. Delahoy, Editor(s)

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