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Proceedings Paper

Charge carrier injection and transport in organic thin films
Author(s): Toshinori Matsushima; Guang-He Jin; Yoshihiro Kanai; Tomoyuki Yokota; Seiki Kitada; Toshiyuki Kishi; Hideyuki Murata
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Paper Abstract

Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N'- diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (α-NPD) layer were measured with various thicknesses of a molybdenum oxide (MoO3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO3 layer forms Ohmic hole injection at the ITO/MoO3/α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to electron transfers from ITO to MoO3 and from α-NPD to MoO3. Moreover, we demonstrated that the Ohmic hole injection is realized at the interfaces of ITO/rubrene and ITO/N,N'-di(m-tolyl)-N,N'-diphenylbenzidine (TPD) using an ultrathin MoO3 layer as well.

Paper Details

Date Published: 2 September 2008
PDF: 11 pages
Proc. SPIE 7051, Organic Light Emitting Materials and Devices XII, 705112 (2 September 2008); doi: 10.1117/12.793969
Show Author Affiliations
Toshinori Matsushima, Japan Advanced Institute of Science and Technology (Japan)
Guang-He Jin, Japan Advanced Institute of Science and Technology (Japan)
Yoshihiro Kanai, Japan Advanced Institute of Science and Technology (Japan)
Tomoyuki Yokota, Japan Advanced Institute of Science and Technology (Japan)
Seiki Kitada, Japan Advanced Institute of Science and Technology (Japan)
Toshiyuki Kishi, Japan Advanced Institute of Science and Technology (Japan)
Hideyuki Murata, Japan Advanced Institute of Science and Technology (Japan)


Published in SPIE Proceedings Vol. 7051:
Organic Light Emitting Materials and Devices XII
Franky So; Chihaya Adachi, Editor(s)

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