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Proceedings Paper

Schottky barrier formation using composite of polyaniline containing iron oxides
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Paper Abstract

A composite of polyaniline (PANI) containing iron oxides (Fe3O4) with nanometer size was prepared by a chemical method. The electrical properties of (PANI-Fe3O4) sandwich structure using ohmic gold and blocking aluminium electrodes were studied. The current density - voltage (J-V) characteristics for the device resemble the typical dark current versus applied voltage characteristic for conventional Schottky diode. Electronic parameters have been calculated using J-V and capacitance-voltage (C-V) measurements.

Paper Details

Date Published: 7 October 2008
PDF: 7 pages
Proc. SPIE 7052, Organic Photovoltaics IX, 705212 (7 October 2008); doi: 10.1117/12.793869
Show Author Affiliations
H. A. Motaweh, Alexandria Univ. (Egypt)
T. G. Abdel-Malik, Univ. of Minia (Egypt)


Published in SPIE Proceedings Vol. 7052:
Organic Photovoltaics IX
Zakya H. Kafafi; Paul A. Lane, Editor(s)

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