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Proceedings Paper

Plasmon mediated, InGaAs/InP, tunable far-IR detector
Author(s): Walter R. Buchwald; Himanshu Saxena; Brian Krejca; Mark Roland; Robert E. Peale
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Paper Abstract

Plasmon resonances in the two dimensional electron gas (2-deg) of a high electron mobility transistor (HEMT) can affect transport properties. The resonance frequency depends on the gate-tuned sheet charge density of the 2deg and on the characteristic length of the gate metallization by which free space THz radiation couples to the plasmon. Thus, this type of device can be used as a tunable detector. This work presents an experimental investigation of such a device fabricated from the InGaAs/InP material system. E-beam lithography was used to fabricate a gate in the form of a grating with sub-micron period. Sensitivity of the conductance to incident THz fields is reported. Direct absorption of THz, temperature effects, and the effects of source to drain current on system performance are also investigated. It is expected that this class of device will find use in space-borne remote sensing applications.

Paper Details

Date Published: 3 September 2008
PDF: 8 pages
Proc. SPIE 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI, 70820B (3 September 2008); doi: 10.1117/12.793804
Show Author Affiliations
Walter R. Buchwald, Air Force Research Lab. (United States)
Himanshu Saxena, Univ. of Central Florida (United States)
Brian Krejca, Solid State Scientific Corp. (United States)
Mark Roland, Solid State Scientific Corp. (United States)
Robert E. Peale, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 7082:
Infrared Spaceborne Remote Sensing and Instrumentation XVI
Marija Strojnik, Editor(s)

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