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Proceedings Paper

Blue photoluminescence of PECVD SiC-based films
Author(s): V. I. Ivashchenko; A. V. Vasin; L. A. Ivashchenko; M. V. Ushakov
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Paper Abstract

Amorphous and nanocrystalline SiC films enriched by oxygen were deposited by a PECVD technique using methyltrichlorosilane as a gas-precursor at substrate temperature in the range of 200-350 °C. X-ray diffraction (XRD) of the film deposited at 350°C exhibited the presence of SiC nano-crystallites. In this film the bright blue photoluminescence (PL) with spectrum that has a double-peak structure at 415 and 437 nm was obsearved at room temperature. The film was annealed at 650 and 850 °C in vacuum. Annealing at 650 °C strongly enhanced blue-white photoemission with maximum intensity around 470 cm-1. Moderate annealing was found to lead to strengthening the C-H, C-C and Si-C bonds as well as to increasing of a size of SiC grains embedded in the amorphous Si:C:O:H matrix. A further increase of annealing temperature up to 850 °C caused a drop of PL. Basing on an analysis of experimental data and first principles simulations of several hydrogenated SiC and Si nanoclusters, we suggest that the blue PL in as-deposited nc-SiC:H film and related Si-based nanostructures can be assigned to the radiative recombination in a radiative center (RC) located at the nanocrystallite surface, whereas the excitation of electron-hole pares occurs in nanocrystallite cores. It follows from our calculations that O-O structural groups can be considered as a radiative recombination centers. The recombination at band tails of the amorphous Si:C:O:H tissue (or at the oxygen-related defect states in a-SiOx, in the case of Si nanostructures) gives rise to a shoulder around 470 nm.

Paper Details

Date Published: 10 September 2008
PDF: 9 pages
Proc. SPIE 7041, Nanostructured Thin Films, 70410X (10 September 2008); doi: 10.1117/12.793676
Show Author Affiliations
V. I. Ivashchenko, Institute for Problems in Materials Science (Ukraine)
A. V. Vasin, Institute of Semiconductor Physics (Ukraine)
L. A. Ivashchenko, Institute for Problems in Materials Science (Ukraine)
M. V. Ushakov, Institute for Problems in Materials Science (Ukraine)


Published in SPIE Proceedings Vol. 7041:
Nanostructured Thin Films
Geoffrey B. Smith; Akhlesh Lakhtakia, Editor(s)

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