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Proceedings Paper

Negative magnetoresistance due to weak localization and electron-electron interactions effects in metallic n-type InP semiconductor at very low temperatures with magnetic field
Author(s): A. El kaaouachi; R. Abdia; A. Nafidi; G. Biskupski; J. Hemine
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Paper Abstract

We present magnetoresistance measurements on metallic n-type InP sample with a carrier density n=1.241023 m-3, far from the metal-insulator transition (MIT). The experiments were carried out at low temperature in the range 4.2-0.6 K and in magnetic fields up to 1 T. We have observed negative magnetoresistance (NMR) behaviour, and the experimental data are interpreted in terms of the weak localization and the effect of electron-electron interactions. Experimental data are compared with available theoretical models using a non-linear regression method with adjustable parameters τε and F. τε is the inelastic scattering time and F is the Hartree-Fock constant.

Paper Details

Date Published: 21 August 2008
PDF: 12 pages
Proc. SPIE 7034, Physical Chemistry of Interfaces and Nanomaterials VII, 70340Q (21 August 2008); doi: 10.1117/12.793623
Show Author Affiliations
A. El kaaouachi, Univ. Ibn Zohr (Morocco)
R. Abdia, Univ. Ibn Zohr (Morocco)
A. Nafidi, Univ. Ibn Zohr (Morocco)
G. Biskupski, Lab. de Spectroscopie Hertzienne, CNRS, Univ. des Sciences et Technique de Lille I (France)
J. Hemine, Univ. of Science and Technology of Mohammadia (Morocco)

Published in SPIE Proceedings Vol. 7034:
Physical Chemistry of Interfaces and Nanomaterials VII
Garry Rumbles; Oliver L. A. Monti, Editor(s)

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