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Proceedings Paper

Analysis of facet heating in semiconductor lasers
Author(s): D. Wawer; T. J. Ochalski; K. Pierściński; M. Szymański; M. Bugajski; Ł. Piskorski; K. Gutowski; A. Kozłowska; A. Maląg
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Paper Abstract

High brightness, high power, semiconductor lasers have many potential applications such as: free space communications, printing, material processing, pumping etc [1]. Such applications require lasers, which are characterized by reliability and long lifetime. Catastrophic optical mirror damage (COMD) process is one of the major mechanisms, which drastically limits laser lifetime and emitted optical power [2]. Mirror degradation and eventually destruction of lasers is caused by facet heating due to nonradiative surface recombination of carriers. Facet heating reduces the band gap energy, consequently increasing the absorption coefficient at the facet. The absorbed light and photo-induced electron-hole pair are increased by the increase in the absorption coefficient. Both effects lead to further nonradiative recombination of carriers which induces heating and so on, up to degradation of mirror or even destruction of laser. We see that this effect is very undesirable and knowledge of the temperature dissipation on the surface is very important for improving semiconductor lasers design. In this work we present the analysis of temperature distribution at the front facet of the broad area GaAsP/AlGaAs lasers by means of micro-Thermoreflectance (μTR) Spectroscopy. Several methods proved to be useful in determining the temperature of the laser surface. These are micro-probe band-to-band photoluminescence, thermoreflectance spectroscopy and Raman spectroscopy [2, 3, 4, 5]. We have used μTR because it is contactless, non-destructive technique which enables us to obtain temperature distribution in real time.

Paper Details

Date Published: 5 March 2008
PDF: 7 pages
Proc. SPIE 7009, Second International Conference on Advanced Optoelectronics and Lasers, 70090C (5 March 2008); doi: 10.1117/12.793319
Show Author Affiliations
D. Wawer, Institute of Electron Technology (Poland)
T. J. Ochalski, Institute of Electron Technology (Poland)
K. Pierściński, Institute of Electron Technology (Poland)
M. Szymański, Institute of Electron Technology (Poland)
M. Bugajski, Institute of Electron Technology (Poland)
Ł. Piskorski, Technical Univ. of Łódź (Poland)
K. Gutowski, Technical Univ. of Łódź (Poland)
A. Kozłowska, Institute of Electronics Materials Technology (Poland)
A. Maląg, Institute of Electronics Materials Technology (Poland)

Published in SPIE Proceedings Vol. 7009:
Second International Conference on Advanced Optoelectronics and Lasers

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