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Proceedings Paper

Some electro-physical properties of InSb and InAs layers that were received with the help of methods of relaxed optics
Author(s): Petro P. Trokhimchuck
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Paper Abstract

The basic problems of the receiving p-n junctions in ion implanted InSb Mg+/InSb after CO2-laser irradiation and in p-InSb and p-InAs after Ruby laser irradiation are represented. Proper Volt-Ampere characteristics are analyzed. The basic physical mechanisms of receiving these structures are discussed too. Basic cause of difference these p-n junctions is various mechanisms of irreversible interaction light and semiconductor (self-absorption for Ruby laser irradiation and "damage"-absorption for CO2-laser irradiation).

Paper Details

Date Published: 5 March 2008
PDF: 8 pages
Proc. SPIE 7009, Second International Conference on Advanced Optoelectronics and Lasers, 700906 (5 March 2008); doi: 10.1117/12.793296
Show Author Affiliations
Petro P. Trokhimchuck, Lesya Ukrayinka's Volyn State Univ. (Ukraine)
International Scientific Technical Univ. (Ukraine)

Published in SPIE Proceedings Vol. 7009:
Second International Conference on Advanced Optoelectronics and Lasers
Igor A. Sukhoivanov; Vasily A. Svich; Yuriy S. Shmaliy, Editor(s)

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