Share Email Print
cover

Proceedings Paper

Some electro-physical properties of InSb and InAs layers that were received with the help of methods of relaxed optics
Author(s): Petro P. Trokhimchuck
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The basic problems of the receiving p-n junctions in ion implanted InSb Mg+/InSb after CO2-laser irradiation and in p-InSb and p-InAs after Ruby laser irradiation are represented. Proper Volt-Ampere characteristics are analyzed. The basic physical mechanisms of receiving these structures are discussed too. Basic cause of difference these p-n junctions is various mechanisms of irreversible interaction light and semiconductor (self-absorption for Ruby laser irradiation and "damage"-absorption for CO2-laser irradiation).

Paper Details

Date Published: 5 March 2008
PDF: 8 pages
Proc. SPIE 7009, Second International Conference on Advanced Optoelectronics and Lasers, 700906 (5 March 2008); doi: 10.1117/12.793296
Show Author Affiliations
Petro P. Trokhimchuck, Lesya Ukrayinka's Volyn State Univ. (Ukraine)
International Scientific Technical Univ. (Ukraine)


Published in SPIE Proceedings Vol. 7009:
Second International Conference on Advanced Optoelectronics and Lasers

© SPIE. Terms of Use
Back to Top