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Proceedings Paper

Quantum dot photonics: edge emitter amplifier, and VCSEL
Author(s): F. Hopfer; M. Kuntz; M. Lämmlin; G. Fiol; N. N. Ledentsov; A. R. Kovsh; S. S. Mikrin; I. Kaiander; V. Haisler; A. Lochmann; A. Mutig; C. Schubert; A. Umbach; V. M. Ustinov; U. W. Pohl; D. Bimberg
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Paper Abstract

Low transparency current density and improved temperature stability with a large characteristic temperature T0 > 650 K up to 80 °C are demonstrated for 1.3 μm MBE grown InGaAs quantum dot (QD) edge emitting lasers. Digital modulation with an open eye pattern up to 12 Gb/s at room temperature and bit error rate below 10-12 for 10 Gb/s modulation was realized for this wavelength. Semiconductor optical amplifiers based on InGaAs QD gain media achieved a chip gain of 26 dB. A conventionally doped semiconductor DBR QD-VCSEL containing 17 p-modulation doped QD layers demonstrated a cw output power of 1.8 mW and a differential efficiency of 20 % at 20 °C. The maximum -3dB modulation bandwidth at 25 °C was 3 GHz. First MOCVD-grown QD-VCSELs with selectively oxidized DBRs and 9 QD-layers were realized, emitting at 1.1 μm. A cw multimode output power of 1.5 mW, 6 mW in pulsed operation, and an cw external efficiency of 45 % were achieved at 20 °C. The minimum threshold current of a device with 2 μm aperture was 85 μA.

Paper Details

Date Published: 5 March 2008
PDF: 8 pages
Proc. SPIE 7009, Second International Conference on Advanced Optoelectronics and Lasers, 700902 (5 March 2008); doi: 10.1117/12.793286
Show Author Affiliations
F. Hopfer, Technische Univ. Berlin (Germany)
M. Kuntz, Technische Univ. Berlin (Germany)
M. Lämmlin, Technische Univ. Berlin (Germany)
G. Fiol, Technische Univ. Berlin (Germany)
N. N. Ledentsov, Technische Univ. Berlin (Germany)
NL Nanosemiconductor GmbH (Germany)
A. R. Kovsh, NL Nanosemiconductor GmbH (Germany)
S. S. Mikrin, NL Nanosemiconductor GmbH (Germany)
I. Kaiander, Technische Univ. Berlin (Germany)
V. Haisler, Technische Univ. Berlin (Germany)
Institute of Semiconductor Physics (Russia)
A. Lochmann, Technische Univ. Berlin (Germany)
A. Mutig, Technische Univ. Berlin (Germany)
C. Schubert, Fraunhofer Heinrich-Hertz-Institut Berlin (Germany)
A. Umbach, U2T Photonics AG (Germany)
V. M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
U. W. Pohl, Technische Univ. Berlin (Germany)
D. Bimberg, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 7009:
Second International Conference on Advanced Optoelectronics and Lasers

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